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TSM802 - 20V N-Channel MOSFET w/ESD Protected

General Description

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Key Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Low Profile 0.75mm (typ. ) ESD Protect 2KV Block Diagram.

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Datasheet Details

Part number TSM802
Manufacturer Taiwan Semiconductor Company
File Size 278.05 KB
Description 20V N-Channel MOSFET w/ESD Protected
Datasheet download datasheet TSM802 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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20V N-Channel MOSFET w/ESD Protected TDFN 3x3 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain www.DataSheet4U.com TSM802 PRODUCT SUMMARY VDS (V) 20 RDS(on)(mΩ) 25 @ VGS = 4.5V 30 @ VGS = 2.5V 65 @ VGS = 1.8V ID (A) 5 4 2 Features ● ● ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Low Profile 0.75mm (typ.) ESD Protect 2KV Block Diagram Application ● ● Specially Designed for Li-on Battery Packs Battery Switch Application Ordering Information Part No.