TSM802 Datasheet | Taiwan Semiconductor

20V N-Channel MOSFET w/ESD Protected TDFN 3x3 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain .. PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 25 @ VGS = 4.5V 30 @ VGS = 2.5V 65 @ VGS = 1.8V ID (A) 5 4 2 Features - - - - Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Low Profile 0.75mm (typ.) ESD Protect 2KV Block Diagram Application - - Specially Designed for Li-on Battery Packs Battery Switch Application Ordering Information Part No. Package Packing 3Kpcs / 7” Reel 3Kpcs / 7” Reel 10Kpcs / 13” Reel 10Kpcs / 13” Reel N-Channel MOSFET TSM802CQ RV TDFN 3x3 TSM802CQ RVG TDFN 3x3 TSM802CQ RK TDFN 3x3...