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TSM40N03PQ33 - N-Channel Power MOSFET

General Description

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Key Features

  • Advanced Trench Technology.
  • Low On-Resistance.
  • Low gate charge typical @ 12nC (Typ. ).
  • Low Crss typical @ 140pF (Typ. ) Ordering Information Part No. Package Packing TSM40N03PQ33 RGG PDFN33 5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current TC=70°C TA=25°C ID TA=7.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PDFN33 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain TSM40N03PQ33 30V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 4.6 @ VGS =10V 30 5.9 @ VGS =4.5V ID (A) 19 16 Features ● Advanced Trench Technology ● Low On-Resistance ● Low gate charge typical @ 12nC (Typ.) ● Low Crss typical @ 140pF (Typ.) Ordering Information Part No. Package Packing TSM40N03PQ33 RGG PDFN33 5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current TC=70°C TA=25°C ID TA=70°C Drain Current-Pulsed Note 1 IDM Avalanche Current, L=0.