Datasheet Summary
Taiwan Semiconductor
N-Channel Power MOSFET
60V, 8A, 36mΩ
Features
- Advance trench process technology
- High density cell design for ultra low on- resistance
- RoHS pliant
- Halogen-free
APPLICATIONS
- High-Side DC/DC conversion
- Notebook
- Industrial
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
VGS = 10V
RDS(on) (max) mΩ
VGS = 4.5V
Qg
10 nC
SOP-8
Note: MSL 1 (Moisture Sensitivity Level) per...