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TSM4436 - N-Channel Power MOSFET

Key Features

  • Advance trench process technology.
  • High density cell design for ultra low on- resistance.
  • RoHS Compliant.
  • Halogen-free.

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TSM4436 Taiwan Semiconductor N-Channel Power MOSFET 60V, 8A, 36mΩ FEATURES ● Advance trench process technology ● High density cell design for ultra low on- resistance ● RoHS Compliant ● Halogen-free APPLICATIONS ● High-Side DC/DC conversion ● Notebook ● Industrial KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 60 V VGS = 10V 36 RDS(on) (max) mΩ VGS = 4.5V 43 Qg 10 nC SOP-8 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current TC= 25°C ID 8 Pulsed Drain Current IDM 25 Single Pulse Avalanche Current (Note 1) IAS 12 Single Pulse Avalanche Energy (Note 1) EAS 22.