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TSM40N03PQ56 - N-Channel Power MOSFET

General Description

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Key Features

  • Advanced Trench Technology.
  • Low On-Resistance.
  • Low gate charge typical @ 12nC (Typ. ).
  • Low Crss typical @ 140pF (Typ. ) Ordering Information Part No. Package Packing TSM40N03PQ56 RLG PDFN56 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Block Diagram N-Channel MOSFET Absolute Maximum Ratings (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage TC=25°C VGS Continuous Drain Current TC=70°C TA=25°C TA=70.

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Full PDF Text Transcription (Reference)

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TSM40N03PQ56 30V N-Channel Power MOSFET PDFN56 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 4.5 @ VGS =10V 5.8 @ VGS =4.5V ID (A) 19 16 Features ● Advanced Trench Technology ● Low On-Resistance ● Low gate charge typical @ 12nC (Typ.) ● Low Crss typical @ 140pF (Typ.) Ordering Information Part No. Package Packing TSM40N03PQ56 RLG PDFN56 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Block Diagram N-Channel MOSFET Absolute Maximum Ratings (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage TC=25°C VGS Continuous Drain Current TC=70°C TA=25°C TA=70°C ID Drain Current-Pulsed Note 1 IDM Avalanche Current, L=0.