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TSM4433 Datasheet PDF

Taiwan Semiconductor TSM4433

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Part No. TSM4433
Datasheet TSM4433 Download
Manufacturer
Taiwan Semiconductor
Description 20V P-Channel MOSFET
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TSM4433 datasheet page 1 preview

FEATURES

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● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application
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● DC-DC Conversion Asynchronous Buck Converter P-Channel MOSFET Ordering Information Part No. TSM4433CS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C Limit -20 ±8 -3.9 -10 -1.2 2.5 1.3 +150 - 55 to +150 Unit V V A A A W o o C C

THERMAL PERFORMANCE

Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 10 sec. Symbol RӨ...
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