Datasheet Summary
Taiwan Semiconductor
N-Channel Power MOSFET
150V, 1.4A, 480mΩ
Features
- Low RDS(ON) to minimize conductive losses
- Low gate charge for fast power switching
- pliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
APPLICATIONS
- Battery Management System
- LED Lighting
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
VGS = 10V
RDS(on) (max) mΩ
VGS = 6V
Qg
8 nC
SOT-26
Note: MSL 1 (Moisture Sensitivity Level) per...