TSM4806 - N-Channel Power MOSFET

Taiwan Semiconductor

General Description

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No license, express or implied, to any intellectual property rights is granted by this document.

Key Features

Advanced High Cell Density Trench Technology.
Low Gate Charge. Block Diagram.

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TSM4806 n-channel power mosfet by Taiwan Semiconductor - Datasheet Preview

Datasheet Details

Part number	TSM4806
Manufacturer	Taiwan Semiconductor
File Size	153.54 KB
Description	N-Channel Power MOSFET
Datasheet	TSM4806 Datasheet

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Full PDF Text Transcription (Reference)

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TSM4806 20V N-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value VDS VGS = 4.5V 20 20 RDS(on) (max) VGS = 2.5V VGS = 1.8V 25 31 Qg 12.3 Unit V mΩ nC Features ● Advanced High Cell Density Trench Technology. ● Low Gate Charge. Block Diagram Application ● Networking DC-DC Power System. ● Load Switch. Ordering Information Part No. Package Packing TSM4806CS RLG SOP-8 2.5kpcs / 13” Reel Note: “G” denotes Halogen Free Product.