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TSM60N900 - N-Channel Power MOSFET

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Features

  • Super-Junction technology.
  • High performance due to small figure-of-merit.
  • High ruggedness performance.
  • High commutation performance.

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Datasheet Details

Part number TSM60N900
Manufacturer Taiwan Semiconductor
File Size 912.02 KB
Description N-Channel Power MOSFET
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ITO-220 TO-252 (DPAK) TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value VDS 600 RDS(on) (max) Qg 0.9 9.7 Unit V Ω nC Features ● Super-Junction technology ● High performance due to small figure-of-merit ● High ruggedness performance ● High commutation performance Application ● Power Supply. ● Lighting Ordering Information Part No. Package Packing TSM60N900CI C0G ITO-220 50pcs / Tube TSM60N900CH C5G TO-251 75pcs / Tube TSM60N900CP ROG TO-252 2.
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