• Part: TSM60N900
  • Description: N-Channel Power MOSFET
  • Manufacturer: Taiwan Semiconductor
  • Size: 912.02 KB
Download TSM60N900 Datasheet PDF
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Datasheet Summary

ITO-220 TO-252 (DPAK) 600V, 4.5A, 0.9Ω N-Channel Power MOSFET TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value VDS 600 RDS(on) (max) Qg 0.9 9.7 Unit V Ω nC Features - Super-Junction technology - High performance due to small figure-of-merit - High ruggedness performance - High mutation performance Application - Power Supply. - Lighting Ordering Information Part No. Package Packing TSM60N900CI C0G ITO-220 50pcs / Tube TSM60N900CH C5G TO-251 75pcs /...