TSM60N900 - N-Channel Power MOSFET

Taiwan Semiconductor

General Description

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No license, express or implied, to any intellectual property rights is granted by this document.

Key Features

Super-Junction technology.
High performance due to small figure-of-merit.
High ruggedness performance.
High commutation performance.

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TSM60N900 n-channel power mosfet by Taiwan Semiconductor - Datasheet Preview

Datasheet Details

Part number	TSM60N900
Manufacturer	Taiwan Semiconductor
File Size	912.02 KB
Description	N-Channel Power MOSFET
Datasheet	TSM60N900 Datasheet

Full PDF Text Transcription for TSM60N900 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TSM60N900. For precise diagrams, and layout, please refer to the original PDF.

ITO-220 TO-252 (DPAK) TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value...

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: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value VDS 600 RDS(on) (max) Qg 0.9 9.7 Unit V Ω nC Features ● Super-Junction technology ● High performance due to small figure-of-merit ● High ruggedness performance ● High commutation performance Application ● Power Supply. ● Lighting Ordering Information Part No. Package Packing TSM60N900CI C0G ITO-220 50pcs / Tube TSM60N900CH C5G TO-251 75pcs / Tube TSM60N900CP ROG TO-252 2.

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