TSM60N1R4 Datasheet | Taiwan Semiconductor

TO-252 (DPAK) TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source 600V, 3.3A, 1.4Ω N-Channel Power MOSFET Key Parameter Performance Parameter Value VDS RDS(on) (max) Qg 600 1.4 7.7 Unit V Ω nC Features - Super-Junction technology - High performance due to small figure-of-merit - High ruggedness performance - High mutation performance Application - Power Supply - Lighting Ordering Information Part No. Package Packing TSM60N1R4CH C5G TO-251 75pcs / Tube TSM60N1R4CP ROG TO-252 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony...