TSM2321 Datasheet | Taiwan Semiconductor

-20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = - 20V RDS (on), Vgs @ -4.5V, Ids @ -3.2A = 65mΩ RDS (on), Vgs @ -2.5V, Ids @ -2.0A = 90mΩ .. Features — — Advanced trench process technology High density cell design for ultra low on-resistance — — Excellent thermal and electrical capabilities pact and low profile SOT-23 package Block Diagram Ordering Information Part No. TSM2321CX Packing Tape & Reel Package...