TSM2831 Datasheet | Taiwan Semiconductor

20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Drain 3. Source VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 2.8A =120mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =180mΩ .. Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities 2.5V operating voltage Block Diagram Ordering Information Part No. TSM2831CY Packing Tape & Reel 1kpcs per reel Package...