TSM2832 Datasheet | Taiwan Semiconductor

20V N-Channel Enhancement Mode MOSFET VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 3.6A = 60mΩ RDS (on), Vgs @ 2.5V, Ids @ 3.1A = 90mΩ Pin assignment: 1. Gate 2. Drain 3. Source .. Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities 2.5V operating voltage Block Diagram Ordering Information Part No. TSM2832CY Packing Tape & Reel 1kpcs per reel Package...