TSM4835 Datasheet | Taiwan Semiconductor

Pin assignment: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain .. 30V P-Channel Enhancement Mode MOSFET VDS = - 30V RDS (on), Vgs @ - 10V, Ids @ - 9.5A =18mΩ RDS (on), Vgs @ - 4.5V, Ids @ - 7.5A =30mΩ Features — — — Advanced trench process technology High density cell design for ultra low on-resistance High gate voltage Block Diagram Ordering Information Part No. TSM4835CS Packing Tape & Reel Package...