TDM3411 - 2N AND 2P-CHANNEL Enhancement Mode MOSFET

Description

The TDM3411 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Features

Techcode

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Datasheet Details

Part number	TDM3411
Manufacturer	Techcode
File Size	246.21 KB
Description	2N AND 2P-CHANNEL Enhancement Mode MOSFET
Datasheet	TDM3411 Datasheet
Additional preview pages of the TDM3411 datasheet.

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Full PDF Text Transcription

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T echcode® 2N AND 2P-CHANNEL Enhancement Mode MOSFET DESCRIPTION The TDM3411 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES  N CHANNEL RDS(ON) < 35mΩ @ VGS=4.5V RDS(ON) < 31mΩ @ VGS=10V  P CHANNEL RDS(ON) < 43mΩ @ VGS=‐4.

Published: May 4, 2018 |