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TDM3415 - P-Channel Enhancement Mode MOSFET

General Description

The  TDM3415  uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.

This  device  is  suitable  for  use  as  a  load  switch  or  in  PWM  applications.

Key Features

  • ‐30V/‐17.6A .
  • RDS(ON) .

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Datasheet Details

Part number TDM3415
Manufacturer Techcode
File Size 560.00 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet TDM3415 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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T  echcode®       P-Channel Enhancement Mode MOSFET DESCRIPTION  The  TDM3415  uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.  This  device  is  suitable  for  use  as  a  load  switch  or  in  PWM  applications.  GENERAL FEATURES   ‐30V/‐17.6A   RDS(ON) < 15mΩ @ VGS=‐4.