TDM3412 - Dual N-Channel Enhancement Mode MOSFET

Description

The TDM3412 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Features

Channel 1 RDS(ON) .

Techcode

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Datasheet Details

Part number	TDM3412
Manufacturer	Techcode
File Size	868.62 KB
Description	Dual N-Channel Enhancement Mode MOSFET
Datasheet	TDM3412 Datasheet
Additional preview pages of the TDM3412 datasheet.

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Full PDF Text Transcription

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T echcode® Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The TDM3412 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES  Channel 1 RDS(ON) < 17.5mΩ @ VGS=4.5V  RDS(ON) < 10.8mΩ @ VGS=10V  Channel 2 RDS(ON) < 16mΩ @ VGS=4.

Published: May 4, 2018 |