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TDM3413 - P-Channel Enhancement Mode MOSFET

Description

The  TDM3413  uses  advanced  trench  technology  to  provide excellent RDS(ON) and low gate charge.

This  device is suitable for use as a load switch or in PWM  applications.

Features

  • ‐30V/‐17.6A .
  • RDS(ON) .

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Datasheet preview – TDM3413

Datasheet Details

Part number TDM3413
Manufacturer Techcode
File Size 565.73 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet TDM3413 Datasheet
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Full PDF Text Transcription

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T  echcode®       P-Channel Enhancement Mode MOSFET DESCRIPTION  The  TDM3413  uses  advanced  trench  technology  to  provide excellent RDS(ON) and low gate charge. This  device is suitable for use as a load switch or in PWM  applications.  GENERAL FEATURES   ‐30V/‐17.6A   RDS(ON) < 15mΩ @ VGS=‐4.
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