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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS357
Low Voltage High Speed Switching
z Low forward voltage z Low reverse current z Small package
: VF (3) = 0.54V (typ.) : IR = 5μA (max) : SC-70
1SS357
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
45 V
Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms)
VR IFM IO IFSM
40 V 300 mA 100 mA
1A
Power dissipation
P
200*
mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
JEDEC JEITA
― ―
temperature, etc.
1SS357 Datasheet
