1SS357
Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching z Low forward voltage z Low reverse current z Small package : VF (3) = 0.54V (typ.) : IR = 5μA (max) : S...
Datasheets by Manufacturer
- 1SS357 — Won-Top Electronics — SURFACE MOUNT SCHOTTKY BARRIER DIODE
- 1SS357 — Galaxy Microelectronics — Surface mounting schottky Diode
- 1SS357 — Rectron — SCHOTTKY DIODE
- 1SS357 — Good-Ark Semiconductor — 200mW SOD-323 Schottky Barrier Diode
- 1SS356 — ROHM — Band switching diode
- 1SS352 — Galaxy Microelectronics — Switching Diode
- 1SS355 — WEJ — DIODE
- 1SS355VMFH — ROHM — Switching Diode
- 1SS355VM — ROHM — Switching Diode
- 1SS355 — WILLAS — Switching diode