Datasheet Summary
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Low Voltage High Speed Switching z Low forward voltage z Low reverse current z Small package
: VF (3) = 0.54V (typ.) : IR = 5μA (max) : SC-70
Unit:...
- Part: 1SS357
- Description: Silicon Epitaxial Schottky Barrier Type Diode
- Manufacturer: Toshiba
- Size: 201.32 KB
Other 1SS357 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Rectron |
1SS357 | SCHOTTKY DIODE |
WEITRON |
1SS357 | Surface Mount Schottky Barrier Diode |
LGE |
1SS357 | Surface Mounting Schottky Diode |
Micro Commercial Components |
1SS357 | Switching Diode |
JCET |
1SS357 | SCHOTTKY BARRIER DIODE |