1SS402 - Diode

Toshiba Semiconductor

Datasheet Details

Part number	1SS402
Manufacturer	Toshiba Semiconductor
File Size	179.78 KB
Description	Diode
Datasheet	1SS402 Datasheet
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS402 High Speed Switching Applications 1SS402 Unit in mm z Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities. z Low forward voltage : VF (3) = 0.50V (typ.) z Low reverse current : IR= 0.5μA (max) z Small total capacitance : CT = 3.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge Current (10ms) Power dissipation Junction temperature Storage temperature range VRM VR IFM IO IFSM P Tj Tstg 25 V 20 V 100 * mA 50 * mA 1 * A JEDEC ― 100 * mW JEITA ― 125 °C TOSHIBA 1-2U1A −55~125 °C Weight: 0.006 g(typ.

Published: Mar 23, 2005 |