1SS402 Datasheet | Toshiba

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Applications Unit in mm z Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities. z Low forward voltage : VF (3) = 0.50V (typ.) z Low reverse current : IR= 0.5μA (max) z Small total capacitance : CT = 3.9p F (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge Current (10ms) Power dissipation Junction temperature Storage temperature range VRM VR IFM IO IFSM P Tj Tstg 25 V 20 V - m A - m A - A JEDEC ― - m W JEITA ― 125 °C TOSHIBA 1-2U1A - 55~125 °C Weight: 0.006 g(typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). - : Unit rating. Total rating = Unit rating × 1.5 Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) VF (3) IR (1) Test Circuit Test Condition ― IF = 1m A ― IF = 5m...