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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS402
High Speed Switching Applications
1SS402
Unit in mm
z Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities.
z Low forward voltage
: VF (3) = 0.50V (typ.)
z Low reverse current
: IR= 0.5μA (max)
z Small total capacitance : CT = 3.9pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge Current (10ms) Power dissipation Junction temperature Storage temperature range
VRM VR IFM IO IFSM P Tj Tstg
25 V
20 V
100 *
mA
50 * mA
1 * A JEDEC
―
100 *
mW JEITA
―
125 °C TOSHIBA
1-2U1A
−55~125 °C Weight: 0.006 g(typ.
1SS402 Datasheet
