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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS404
1SS404
High Speed Switching Applications
• Two-pin small packages are suitable for higher mounting densities • Low forward voltage : VF (3) = 0.38 V (typ.) • Low reverse current: IR = 50 μA (max) • Small total capacitance: CT = 46 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation
VRM VR IFM IO P
25
V
20
V
700
mA
300
mA
200 (Note 1) mW
USC
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55 to 125
°C
JEDEC
―
Operating temperature range
Topr
−40 to 100
°C
JEITA
―
Note: Using continuously under heavy loads (e.g.
1SS404 Datasheet
