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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS401
High Speed Switching Applications
1SS401
Unit: mm
z Low forward voltage z Low reverse current z Small total capacitance
: VF (3) = 0.38 V (typ.) : IR = 50μA (max) : CT = 46 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junction temperature Storage temperature range Operating temperature range
VRM
25 V
VR 20 V
IFM 700 mA
IO 300 mA
P
100
mW
JEDEC JEITA
― SC-70
Tj
125 °C TOSHIBA
1-2P1D
Tstg
−55 to 125
°C
Weigh: 0.006 g(typ.)
Topr
−40 to 100
°C
Note: Using continuously under heavy loads (e.g.
1SS401 Datasheet
