1SS401 Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS401 High Speed Switching Applications 1SS401 Unit: mm z Low forward voltage z Low reverse current z Small total capacitance : 0.006 g(typ.) Topr −40 to 100 °C Note:.
| Part number | 1SS401 |
|---|---|
| Download | 1SS401 Datasheet (PDF) |
| File Size | 172.91 KB |
| Manufacturer | Toshiba |
| Description | Silicon Diode |
|
|
|
| Manufacturer | Part Number | Description |
|---|---|---|
Galaxy Microelectronics |
1SS401 | Schottky barrier diode |
Won-Top Electronics |
1SS401 | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
LGE |
1SS401 | Schottoky Diode |
JCET |
1SS401 | SCHOTTKY BARRIER DIODE |
MLS Microelectronics |
1SS401 | SCHOTTKY BARRIER DIODE |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS401 High Speed Switching Applications 1SS401 Unit: mm z Low forward voltage z Low reverse current z Small total capacitance : 0.006 g(typ.) Topr −40 to 100 °C Note:.