or details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1360
Audio Frequency Amplifier Applications
2SA1360
Unit: mm
• Complementary to 2SC3423 • Small collector output capacitance: Cob = 2.5 pF (typ.) • High transition frequency: fT = 200 MHz (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−150
V
Collector-emitter voltage
VCEO
−150
V
Emitter-base voltage
VEBO −5 V
Collector current
IC −50 mA
Base current
IB −5 mA
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
1.2 W
5
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC JEITA TOSHIBA
― ― 2-8H1A
Note1: Using continuously under heavy loads (e.g.
2SA1360 Datasheet
