• Part: 2SC2551
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 637.99 KB
Download 2SC2551 Datasheet PDF
Toshiba
2SC2551
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications Industrial Applications Unit: mm - High voltage: VCBO = 300 V, VCEO = 300 V - Low saturation voltage: VCE (sat) = 0.5 V (max) - Small collector output capacitance: Cob = 3 p F (typ.) - plementary to 2SA1091. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 300 300 6 100 20 400 150 - 55~150 V V V m A m A m W °C °C JEDEC JEITA TOSHIBA TO-92 SC-43 2-5F1B Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.21 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this...