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2SD1438 - Silicon NPN Transistor

Datasheet Summary

Features

  • . High DC Current Gain : hFE=2000(Min. ) (VcE=2V, Ic=lA) . Low Saturation Voltage : VCE(sat)=1.5V(Max. ) (I C=1A, I B=lmA).

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Datasheet Details

Part number 2SD1438
Manufacturer Toshiba Semiconductor
File Size 89.85 KB
Description Silicon NPN Transistor
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Full PDF Text Transcription

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: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) 6 2SD1 438 MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES . High DC Current Gain : hFE=2000(Min.) (VcE=2V, Ic=lA) . Low Saturation Voltage : VCE(sat)=1.5V(Max.) (I C=1A, I B=lmA) INDUSTRIAL APPLICATIONS Unit in mm 7. 9 MAX. MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT SYMBOL VcBO v CEO VEBO ic IB PC RATING 80 80 8 2 0.5 15 UNIT V V V A A W T 150 °C J T stg -55-150 °C COLLECTOR JEDEC 1. EMITTER 2. COLLECTOR (HEAT SINK) 3.
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