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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER)
6
2SD1 438
MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
FEATURES . High DC Current Gain
: hFE=2000(Min.) (VcE=2V, Ic=lA) . Low Saturation Voltage
: VCE(sat)=1.5V(Max.) (I C=1A, I B=lmA)
INDUSTRIAL APPLICATIONS Unit in mm
7. 9 MAX.
MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT
SYMBOL
VcBO v CEO VEBO ic IB PC
RATING 80 80
8 2 0.5 15
UNIT V V V A A W
T
150
°C
J
T stg
-55-150 °C
COLLECTOR
JEDEC
1. EMITTER 2. COLLECTOR (HEAT SINK) 3.
2SD1438 Datasheet
