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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ200
High Power Amplifier Application
High breakdown voltage
: VDSS = −180 V
z High forward transfer admittance : |Yfs| = 4.0 S (typ.)
z Complementary to 2SK1529
2SJ200
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Gate−source voltage
Drain current
(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS VGSS
ID PD Tch Tstg
−180
V
±20
V
−10
A
120
W
150
°C
−55~150
°C
1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g.
2SJ200 Datasheet
