2SJ200 Overview
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 4.0 S (typ.) z plementary to 2SK1529 2SJ200 Unit:.
2SJ200 Datasheet Details
| Part number | 2SJ200 |
|---|---|
| Datasheet | 2SJ200_ToshibaSemiconductor.pdf |
| File Size | 294.58 KB |
| Manufacturer | Toshiba |
| Description | P-Channel MOSFET |
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