Datasheet Details
| Part number | 2SJ200 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 294.58 KB |
| Description | P-Channel MOSFET |
| Datasheet | 2SJ200_ToshibaSemiconductor.pdf |
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Overview: TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 4.0 S (typ.
| Part number | 2SJ200 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 294.58 KB |
| Description | P-Channel MOSFET |
| Datasheet | 2SJ200_ToshibaSemiconductor.pdf |
|
|
|
Compare 2SJ200 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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