2SK2961 - Silicon N Channel MOS Type Field Effect Transistor

Toshiba

Datasheet Details

Part number	2SK2961
Manufacturer	Toshiba
File Size	685.49 KB
Description	Silicon N Channel MOS Type Field Effect Transistor
Datasheet	2SK2961 Datasheet

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2SK2961 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.) z Low leakage current : IDSS = 100 μA (VDS = 60 V) z Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD Tch Tstg 60 60 ±20 2.0 6.0 0.9 150 −55~150 V V V A W °C °C JEDEC TO-92MOD JEITA — TOSHIBA 2-5J1C Weight: 0.