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2SK2965 - Silicon N Channel MOS Type Field Effect Transistor

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  • ich may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equ.

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Datasheet Details

Part number 2SK2965
Manufacturer Toshiba
File Size 206.22 KB
Description Silicon N Channel MOS Type Field Effect Transistor
Datasheet download datasheet 2SK2965 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2965 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2965 Switching Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON-resistance : RDS (ON) = 0.15 Ω (typ.) z High forward transfer admittance : |Yfs| = 10 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 200 V) z Enhancement mode : Vth = 1.5 to 3.