2SK2962
Key Features
- Drain Ratings and Characteristics (Ta = 25°C)
- IDR = 1 A, VGS = 0 V IDR = 1 A, VGS = 0 V, dIDR / dt = 50 A / μs
- Part: 2SK2962
- Description: Silicon N Channel MOS Type Field Effect Transistor
- Category: Transistor
- Manufacturer: Toshiba
- Size: 375.46 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| K2969 | SANYO | 2SK2969 |
| 2SK2960 | Inchange Semiconductor | N-Channel MOSFET Transistor |