2SK2964 - Silicon N Channel MOS Type Field Effect Transistor

Toshiba

Key Features

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2SK2964 silicon n channel mos type field effect transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SK2964
Manufacturer	Toshiba
File Size	403.94 KB
Description	Silicon N Channel MOS Type Field Effect Transistor
Datasheet	2SK2964 Datasheet

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Other Datasheets by Toshiba

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2SK2961	Silicon N Channel MOS Type Field Effect Transistor
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2SK2967	Silicon N Channel MOS Type Field Effect Transistor

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2SK2964 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSVI) 2SK2964 Chopper Regulators, DC−DC Converters and Motor DriveApplications z 4-V gate drive z Low drain-source ON-resistance: RDS (ON) = 0.13 Ω (typ.) z High forward transfer admittance: |Yfs| = 2.5 S (typ.) z Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) z Enhancement mode: Vth = 0.8 to 2.