2SK3017 - Silicon N Channel MOS Type Field Effect Transistor

Toshiba

Datasheet Details

Part number	2SK3017
Manufacturer	Toshiba
File Size	719.67 KB
Description	Silicon N Channel MOS Type Field Effect Transistor
Datasheet	2SK3017 Datasheet

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Other Datasheets by Toshiba

Part Number	Description
2SK302	Silicon N Channel MOS Type Field Effect Transistor
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2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK3017 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.05 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) z Enhancement mode : Vth = 2.0~4.