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2SK3012DSE - N-Channel MOSFET

Key Features

  • ƽ VDS=20V ƽ ID = 6 .5A ƽ RDS(on)” 22mȍ@VGS=4.5V ,ID=6.5A ƽ RDS(on)” 30mȍ@VGS=2.5V ,ID=5.5A SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 Unit: mm 0.4 +0.2 1.6 -0.1 +0.2 2.8 -0.1 0.55 1 2 D 0.95 +0.1 -0.1 0.15 +0.02 -0.02 1.9 +0.1 -0.2 +0.2 1.1 -0.1 G S 0-0.1 +0.1 0.68 -0.1 1. Gate 2. Source 3. Drain Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS ±10 Continuous Drain Current TA=25 ć ID TA=70 ć 6.5 4.8.

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SMD Type N-Channel Enhancement MOSFET 2SK3012DSE MOSFET Ƶ Features ƽ VDS=20V ƽ ID = 6 .5A ƽ RDS(on)” 22mȍ@VGS=4.5V ,ID=6.5A ƽ RDS(on)” 30mȍ@VGS=2.5V ,ID=5.5A SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 Unit: mm 0.4 +0.2 1.6 -0.1 +0.2 2.8 -0.1 0.55 1 2 D 0.95 +0.1 -0.1 0.15 +0.02 -0.02 1.9 +0.1 -0.2 +0.2 1.1 -0.1 G S 0-0.1 +0.1 0.68 -0.1 1. Gate 2. Source 3. Drain Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS ±10 Continuous Drain Current TA=25 ć ID TA=70 ć 6.5 4.8 A Pulsed Drain Current IDM 30 Power Dissipation TA=25 ć 1.3 PD W TA=70 ć 0.