Datasheet Summary
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
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- 4 V gate drive Low drain-source ON resistance: RDS (ON) = 13.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 42 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 60 V) Enhancement-model: Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 35 105 30 Unit V V V A...