2SK3471
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Switching Regulator and DC-DC Converter Applications
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- - Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.) High forward transfer admittance: |Yfs| = 0.4 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 500 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m A) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k W) Gate-source voltage Drain current Drain power dissipation Drain power dissipation (Note 2) DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 0.5 1.5 0.5 1.5 14.3 0.5 0.05 150 -55 to150 Unit V V V A W W
Pulse (Note 1)
Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 4) Channel temperature Storage temperature range
JEDEC m J A m J °C °C
― SC-62 2-5K1B
JEITA TOSHIBA
Weight: 0.05 g (typ.)
Thermal Characteristics
Characteristics...
