2SK3476
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
VHF- and UHF-band Amplifier Applications
Unit: mm Output power: PO = 7.0 W (min) Gain: GP = 11.4d B (min) Drain efficiency: ηD = 60% (min)
- -
- Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gain-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID PD (Note 1) Tch Tstg Rating 20 ±5 3 20 150
- 45~150 Unit V V A W °C °C
Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB) JEDEC ― ― 2-5N1A
Marking
2 Type name
JEITA TOSHIBA
- -
Dot
Lo No. 1. Gate 2. Source (heat sink) 3. Drain
Caution
Please take care to avoid generating static electricity when handling this transistor.
2002-01-09
Electrical Characteristics (Ta = 25°C)
Characteristics Drain cut-off current Gate-source leakage current Threshold voltage Drain-source on-voltage Forward transconductance Input capacitance Output capacitance Output power...
