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2SK3476
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3476
VHF- and UHF-band Amplifier Applications
Unit: mm Output power: PO = 7.0 W (min) Gain: GP = 11.4dB (min) Drain efficiency: ηD = 60% (min)
· · ·
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gain-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID PD (Note 1) Tch Tstg Rating 20 ±5 3 20 150 −45~150 Unit V V A W °C °C
Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB) JEDEC ― ― 2-5N1A
Marking
2 Type name
JEITA TOSHIBA
1
UC
F **
3
Dot
Lo No. 1. Gate 2. Source (heat sink) 3. Drain
Caution
Please take care to avoid generating static electricity when handling this transistor.
2SK3476 Datasheet
