2SK3473
..
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
Switching Regulator Applications
Unit: mm
- -
- -
Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 m A)
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 9 27 150 413 9 15 150 -55~150 A W m J A m J °C °C Unit V V V
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
― SC-65 2-16C1B
Weight: 4.6 g (typ.)
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance,...
