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2SK3475
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3475
VHF- and UHF-band Amplifier Applications
Unit: mm Output power: PO = 630 mW (min) Gain: GP = 14.9dB (min) Drain efficiency: ηD = 45% (min)
· · ·
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gain-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID PD (Note 1) Tch Tstg Rating 20 ±5 1 3 150 −45~150 Unit V V A W °C °C
Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)
JEDEC JEITA TOSHIBA
― SC-62 2-5K1D
Marking
Type name
W
B
1
2
3
1. Gate 2. Source 3. Drain
Caution
Please take care to avoid generating static electricity when handling this transistor.
2SK3475 Datasheet
