2SK3475
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
VHF- and UHF-band Amplifier Applications
Unit: mm Output power: PO = 630 m W (min) Gain: GP = 14.9d B (min) Drain efficiency: ηD = 45% (min)
- -
- Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gain-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID PD (Note 1) Tch Tstg Rating 20 ±5 1 3 150
- 45~150 Unit V V A W °C °C
Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)
JEDEC JEITA TOSHIBA
― SC-62 2-5K1D
Marking
Type name
1. Gate 2. Source 3. Drain
Caution
Please take care to avoid generating static electricity when handling this transistor.
2002-01-09
Electrical Characteristics (Ta = 25°C)
Characteristics Drain cut-off current Gate-source leakage current Threshold voltage Drain-source on-voltage Forward transconductance Input capacitance Output capacitance Output power Drain efficiency...
