2SK3767
..
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Switching Regulator Applications
- -
- - Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m A) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 2 5 25 93 2 Unit V V V A W m J A
1: Gate 2: Drain 3: Source
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
Data Shee
JEDEC JEITA TOSHIBA ― SC-67 2-10U1B
. 4 m J
150 -55~150 °C °C
Weight : 1.7 g (typ.)
Thermal Characteristics
Characteristics Thermal resistance, channel to case...
