The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet4U.com
2SK3762
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS‡W )
2SK3762
unit•F‚•‚•
Switching Regulator Applications
3.84•}0.2
3.84•} 0 .2
10.5 10.5 max max
4.7max 4.7 max
1.3 6.6 max
6.6 max.
• • • •
Low drain-source ON resistance: R DS (ON) = 5.6ƒ¶ (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 ƒÊ A (V DS = 720 V) Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)
1.3
13.4 13.4 min min.
3.9 max 3.9 max.
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ ) Gate-source voltage DC Drain current (Note 1) Symbol V DSS V DGR V GSS ID IDP PD EA S IAR EAR Tch Tstg Pulse (t = 1 ms) (Note 1) Rating 900 900 ±30 2.5 7.5 62 21.
2SK3762 Datasheet
