2SK3762 Description
Low drain-source ON resistance: R DS (ON) = 5.6Ħ (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current:.
- Part: 2SK3762
- Manufacturer: Toshiba
- Size: 270.21 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| 2SK3760 | N-Channel MOSFET |
| 2SK3761 | N-Channel MOSFET |
| 2SK3763 | N-Channel MOSFET |
| 2SK3766 | Silicon N-Channel MOS Type FET |
| 2SK3767 | Silicon N-Channel MOSFET |