2SK3766
2SK3766 is Silicon N-Channel MOS Type FET manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
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Unit: mm
Switching Regulator Applications
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- - Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance: |Yfs| = 0.65 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) Enhancement model: Vth = 3.5~4.5 V (VDS = 10 V, ID = 1...
