2SK3766 - Silicon N-Channel MOS Type FET

Toshiba

Datasheet Details

Part number	2SK3766
Manufacturer	Toshiba
File Size	307.89 KB
Description	Silicon N-Channel MOS Type FET
Datasheet	2SK3766 Datasheet

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2SK3766 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) www.DataSheet4U.com 2SK3766 Unit: mm Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance: |Yfs| = 0.65 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) Enhancement model: Vth = 3.5~4.