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2SK3760
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS‡Y )
2SK3760
unit•F‚•‚•
Switching Regulator Applications
3.84•} 0 .2
3.84•}0.2
10.5 10.5max max
4.7max 4.7 max
1.3 6.6 max
6.6 max.
1.3
• • • •
Low drain-source ON resistance: R DS (ON) = 1.7ƒ¶ (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low leakage current: IDSS = 100 ƒÊ A (V DS = 600 V) Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)
13.4 13.4min min.
3.9 max
3.9 max.
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ ) Gate-source voltage DC Drain current (Note 1) Symbol V DSS V DGR V GSS ID IDP PD EA S IAR EAR Tch Tstg Pulse (t = 1 ms) (Note 1) Rating 600 600 ±30 3.5 14 60 6.
2SK3760 Datasheet
