2SK3760 Overview
1.3 Low drain-source ON resistance: R DS (ON) = 1.7Ħ (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low leakage current:.
Datasheet Details
| Part number | 2SK3760 |
|---|---|
| Datasheet | 2SK3760_ToshibaSemiconductor.pdf |
| File Size | 266.46 KB |
| Manufacturer | Toshiba |
| Description | N-Channel MOSFET |
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