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2SK3761
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS‡Y )
2SK3761
unit•F‚•‚•
Switching Regulator Applications
3.84•}0.2
3.84•} 0 .2
10.5 10.5 max max
4.7max 4.7 max
1.3 6.6 max
6.6 max.
• • • •
Low drain-source ON resistance: R DS (ON) = 0.9ƒ¶ (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 ƒÊ A (V DS = 600 V) Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)
1.3
13.4 min 13.4 min.
3.9 max 3.9 max.
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ ) Gate-source voltage DC Drain current (Note 1) Symbol V DSS V DGR V GSS ID IDP PD EA S IAR EAR Tch Tstg Pulse (t = 1 ms) (Note 1) Rating 600 600 ±30 6 24 74 54 W mJ A mJ °C °C Unit V V V A
15.
2SK3761 Datasheet
