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2SK982 - Silicon N Channel MOS Type Field Effect Transistor

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Part number 2SK982
Manufacturer Toshiba Semiconductor
File Size 515.29 KB
Description Silicon N Channel MOS Type Field Effect Transistor
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK982 High Speed Switching Applications Analog Switch Applications Interface Applications 2SK982 Unit: mm • Excellent switching times: ton = 14 ns (typ.) • High forward transfer admittance: |Yfs| = 100 mS (min) @ID = 50 mA • Low on resistance: RDS (ON) = 0.6 Ω (typ.) @ ID = 50 mA • Enhancement-mode • Complementary to 2SJ148 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC Pulse Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range VDS VGSS ID IDP PD Tch Tstg 60 ±20 200 800 400 150 −55~150 V V mA mW °C °C JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1H Weight: 0.21 g (typ.
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