GT10Q101 Overview
GT10Q101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications Unit: mm The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage:.
Datasheet Details
| Part number | GT10Q101 |
|---|---|
| Datasheet | GT10Q101_ToshibaSemiconductor.pdf |
| File Size | 297.48 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
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