GT10Q101 - Silicon N-Channel IGBT

Toshiba Semiconductor

Datasheet Details

Part number	GT10Q101
Manufacturer	Toshiba Semiconductor
File Size	297.48 KB
Description	Silicon N-Channel IGBT
Datasheet	GT10Q101 Datasheet
Additional preview pages of the GT10Q101 datasheet.

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GT10Q101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications Unit: mm • • • • The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 1200 ±20 10 20 140 150 −55~150 Unit V V A W °C °C JEDEC JEITA TOSHIBA ― ― 2-16C1C Weight: 4.6 g (typ.

Published: Mar 23, 2005 |