Datasheet Details
| Part number | GT10Q101 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 297.48 KB |
| Description | Silicon N-Channel IGBT |
| Download | GT10Q101 Download (PDF) |
|
|
| Part number | GT10Q101 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 297.48 KB |
| Description | Silicon N-Channel IGBT |
| Download | GT10Q101 Download (PDF) |
|
|
|
GT10Q101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications Unit: mm • • • • The 3rd Generation Enhancement-Mode High Speed: tf =.
| Part Number | Description |
|---|---|
| GT10Q301 | Silicon N-Channel IGBT |
| GT10Q311 | Silicon N-Channel IGBT |
| GT10G131 | Silicon N-Channel IGBT |
| GT10J301 | Silicon N-Channel IGBT |
| GT10J303 | Silicon N-Channel IGBT |
| GT10J311 | Silicon N-Channel IGBT |
| GT10J312 | Silicon N-Channel IGBT |
| GT10J321 | Silicon N-Channel IGBT |
| GT15G101 | Silicon N-Channel IGBT |
| GT15J101 | Silicon N-Channel IGBT |