Datasheet Summary
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
High Power Switching Applications
Unit: mm
- -
- - The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max)
Maximum Ratings (Ta = 25°C)
Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 1200 ±20 10 20 140 150
- 55~150 Unit V V A
W °C °C
JEDEC JEITA TOSHIBA
― ― 2-16C1C
Weight: 4.6 g (typ.)
2002-01-23
Electrical Characteristics (Ta = 25°C)
Characteristic...