GT10Q301 - Silicon N-Channel IGBT

Toshiba Semiconductor

Datasheet Details

Part number	GT10Q301
Manufacturer	Toshiba Semiconductor
File Size	168.53 KB
Description	Silicon N-Channel IGBT
Datasheet	GT10Q301 Datasheet
Additional preview pages of the GT10Q301 datasheet.

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GT10Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q301 High Power Switching Applications Motor Control Applications Unit: mm · · · · · The 3rd generation Enhancement-mode High speed: tf = 0.32 µs (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg Rating 1200 ±20 10 20 10 20 140 150 −55 to 150 Unit V V A JEDEC A ― ― 2-16C1C JEITA TOSHIBA Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range W °C °C Weight: 4.6 g (typ.

Published: Sep 3, 2014 |