| Part number | GT10Q301 |
|---|---|
| Download | GT10Q301 Datasheet (PDF) |
| File Size | 168.53 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
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| Part Number | Description |
|---|---|
| GT10Q311 | Silicon N-Channel IGBT |
| GT10Q101 | Silicon N-Channel IGBT |
| GT10G131 | Silicon N-Channel IGBT |
| GT10J301 | Silicon N-Channel IGBT |
| GT10J303 | Silicon N-Channel IGBT |
GT10Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q301 High Power Switching Applications Motor Control Applications Unit: mm · · · · · The 3rd generation Enhancement-mode High speed: tf = 0.32 µs (max) Low saturation voltage:.
