The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SSM3J120TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J120TU
○ Power Management Switch Applications
○ High-Current Switching Applications
• 1.5 V drive • Low on-resistance
Ron = 140 mΩ (max) (@VGS = -1.5 V) Ron = 78 mΩ (max) (@VGS = -1.8 V) Ron = 49 mΩ (max) (@VGS = -2.5 V) Ron = 38 mΩ (max) (@VGS = -4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
2.0±0.1 0.65±0.05
Unit: mm
2.1±0.1 1.7±0.1
0.3-+00..015
1
2
3
0.166±0.05
Drain-Source voltage
VDS
-20
V
Gate-Source voltage
VGSS
±8
V
Drain current
DC
ID
Pulse
IDP
-4.0 A
-8.0
Drain power dissipation
PD (Note 1)
800
mW
PD (Note 2)
500
Channel temperature Storage temperature
Tch
150
°C
Tstg
−55~150
°C
0.7±0.05
UFM
1. Gate 2. Source 3.
SSM3J120TU Datasheet
