Field-Effect Transistor Silicon P-Channel MOS Type
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SSM3J15CT
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J15CT
High-Speed Switching Applications Analog Switch Applications
• Optimum for high-density mounting in small packages
• Low ON-resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)
0.6±0.05 0.5±0.03
Unit: mm
0.65±0.02 0.05±0.03
0.25±0.03
Absolute Maximum Ratings (Ta = 25°C)
３
1.0±0.05
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
−30
V
Gate-Source voltage
VGSS
±20
V
Drain current
DC Pulse
ID
−100
mA
IDP
−200
Drain power dissipation (Ta = 25°C) PD (Note 1)
100
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
0.25±0.03
１
２
0.35±0.02 0.15±0.03
0.05±0.03
0.38
+0.02 -0.
SSM3J15CT Datasheet
