Field-Effect Transistor Silicon P-Channel MOS Type
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J15F
High Speed Switching Applications Analog Switch Applications
SSM3J15F
• Small package
• Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)
Unit: mm
+0.5 2.5-0.3
+0.25 1.5-0.15
+0.1 0.4-0.05
0.3 +0.1 0.16-0.06
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
2.9±0.2 1.9 0.95 0.95
1
2
3
Drain-Source voltage
Gate-Source voltage
Drain current
DC Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
VDS VGSS
ID IDP PD Tch Tstg
−30
V
±20
V
−100 mA
−200
200
mW
150
°C
−55 to 150
°C
+0.2 1.1-0.1
S-MINI
1.Gate 2.Source 3.Drain
0~0.1
Note: Using continuously under heavy loads (e.g.
SSM3J15F Datasheet
