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SSM3J15FV
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J15FV
High-Speed Switching Applications Analog Switch Applications
• Optimum for high-density mounting in small packages • Low on-resistance : RDS(ON) = 12 Ω (max) (@VGS = −4 V)
: RDS(ON) = 32 Ω (max) (@VGS = −2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-Source voltage Gate-Source voltage
Drain current
DC Pulse
Power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
Symbol
Rating
Unit
VDSS
−30
V
VGSS
±20
V
ID
−100
mA
IDP
−200
PD (Note 1)
150
mW
Tch
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
SSM3J15FV Datasheet
