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SSM3J15TE
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J15TE
High Speed Switching Applications Analog Switch Applications
Unit: mm • • Small package Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD Tch Tstg Rating −30 ±20 −100 −200 100 150 −55~150 Unit V V mA mW °C °C
Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
SSM3J15TE Datasheet
