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SSM3K301T
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
SSM3K301T
Power Management Switch Applications
High-Speed Switching Applications
• 1.8 V drive
• Low ON-resistance:
Ron = 110 mΩ (max) (@VGS = 1.8 V) Ron = 74 mΩ (max) (@VGS = 2.5 V) Ron = 56 mΩ (max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm Unit: mm
Characteristics
Symbol
Rating
Unit
Drain-Source voltage Gate-Source voltage
VDS VGSS
20
V
± 12
V
/Package
Drain current
DC
ID
Pulse
IDP
3.5 A
7.0
Drain power dissipation
PD (Note 1)
700
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g.
SSM3K301T Datasheet
